Interband cascade laser emitting >1 photon per injected electron

被引：65

作者：

Felix, CL ^{[1
]}

Bewley, WW ^{[1
]}

Vurgaftman, I ^{[1
]}

Meyer, JR ^{[1
]}

Zhang, D ^{[1
]}

Lin, CH ^{[1
]}

Yang, RQ ^{[1
]}

Pei, SS ^{[1
]}

机构：

[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 11期

基金：

美国国家航空航天局;

关键词：

pulsed lasers; quantum well lasers; semiconductor lasers; semiconductor superlattices; tunnel devices/effects;

D O I：

10.1109/68.634699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 22-stage interband cascade laser with a ''W'' active region for enhanced gain has exhibited lasing at lambda = 3.0 mu m. Threshold current densities are lower than the best reported intersubband quantum cascade laser results at all T up to the maximum lasing temperature of 225 K, At 100 K, output powers up to 430 mW are observed, and the slope of 274 mW/A per facet for high injection levels corresponds to a quantum efficiency of 1.3 photons emitted for every injected electron.

引用

页码：1433 / 1435

页数：3

共 16 条

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