Type-II interband quantum cascade laser at 3.8 mu m

被引：129

作者：

Lin, CH ^{[1
]}

Yang, RQ ^{[1
]}

Zhang, D ^{[1
]}

Murry, SJ ^{[1
]}

Pei, SS ^{[1
]}

Allerman, AA ^{[1
]}

Kutz, SR ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87123

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 07期

关键词：

semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19970421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have demonstrated the first stimulated emission From Sb-based type-II quantum cascade configuration. Laser emission al 3.8 mu m has been observed for temperatures up to 170K. The device was composed of 20 periods of active regions separated by digitally graded quantum-well injection regions.

引用

页码：598 / 599

页数：2

共 12 条

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[4] LIN CH, IN PRESS J CRYSTAL G
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[J]. APPLIED PHYSICS LETTERS, 1996, 69 (19) : 2810 - 2812
[9] VURGAFTMAN I, UNPUB IEEE PHOTONICS
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