Metal based single electron transistors operating at several Kelvin

被引:6
作者
Altmeyer, S
Hamidi, A
Spangenberg, B
Kurz, H
机构
[1] Inst. of Semiconduct. Electronics II, 52074 Aachen
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期
关键词
D O I
10.1116/1.588638
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Metal based single electron transistors fabricated by the step edge cut off process will be presented. Although standard electron beam lithography, dry etching and lift-off techniques were used, devices with tunnel capacitances down to 1.5 aF are realized. They are characterized at different temperatures ranging from 50 mK up to 77 K. Transistor operation at 4.2 K is demonstrated. Traces of the Coulomb blockade are observed up to 77 K. (C) 1996 American Vacuum Society.
引用
收藏
页码:4034 / 4037
页数:4
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