Influence of F+ co-implants on EOR defect formation in B+-implanted, ultrashallow junctions

被引：2

作者：

Boninelli, S. ^{[1
]}

Cristiano, F.

Lerch, W.

Paul, S.

Cowern, N. E. B.

机构：

[1] Mattson Thermal Prod GmbH, D-89160 Dornstadt, Germany

[2] Univ Catania, Ctr Mat & Technol Informat & Commun Sci, Consiglio Nazl Ricerche Inst Nazl FIs Mat, Dipartimento Fis Astronomia, I-95123 Catania, Italy

[3] Univ Toulouse, CNRS, Ctr Elaborat Mat Etudes Struct, F-31055 Toulouse, France

[4] Univ Toulouse, CNRS, Lab Analyse Architecture Syst, Toulouse, France

[5] Univ Surrey, Adv Technol Inst, Surrey, England

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1149/1.2751837

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We studied the influence of energy and fluence of a F+ implantation on the end-of-range (EOR) defects and on B activation in Ge+-preamorphized Si. After F+ co-implantation at either 10 or 22 keV, B transient-enhanced diffusion as well as B electrical deactivation are both reduced. In contrast, 10 keV F+ implantation does not affect the EOR evolution, while defects are stabilized after 22 keV F+ implantation. Our results, therefore, show that the beneficial effects related to F+ co-implantation cannot be explained in terms of a stabilization of the EOR defects. (c) 2007 The Electrochemical Society.

引用

页码：H264 / H266

页数：3

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