Transmission electron microscopy and X-ray diffraction analysis of alumina coating by alternate-current inverted magnetron-sputtering technique

被引：13

作者：

Aryasomayajula, A. ^{[3
]}

Canovic, S. ^{[1
]}

Bhat, D. ^{[2
]}

Gordon, M. H. ^{[3
]}

Halvarsson, A. ^{[1
]}

机构：

[1] Chalmers, SE-41296 Gothenburg, Sweden

[2] Natl Sci Fdn, SBIR STTR, Arlington, VA 22230 USA

[3] Univ Arkansas, Fayetteville, AR 72701 USA

来源：

THIN SOLID FILMS | 2007年 / 516卷 / 2-4期

基金：

美国国家科学基金会;

关键词：

alumina; XRD; TEM; sputtering;

D O I：

10.1016/j.tsf.2007.07.002

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Thin films of alumina were deposited by alternate-current inverted magnetron sputtering at 350 degrees C on stainless steel substrates. Chromium oxide was used as a template layer because it can be deposited at low temperatures and has a low lattice mismatch with alpha alumina. X-ray diffraction and selected area electron diffraction results showed that pure alpha alumina coatings could be grown at 6 kW and 0.5% partial pressure of oxygen. Cross-sectional transmission electron microscopy analysis showed a crystalline layer of alumina on top of the chromium oxide layer. Pure alpha alumina could be grown if deposited for 2 h. Layers with mixed phases of alpha and gamma alumina were obtained with other deposition parameters. (C) 2007 Elsevier B.V. All rights reserved.

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收藏

页码：397 / 401

页数：5

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