Localized epitaxial growth of α-Al2O3 thin films on Cr2O3 template by sputter deposition at low substrate temperature

被引：69

作者：

Jin, P

Nakao, S

Wang, SX

Wang, LM

机构：

[1] Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan

[2] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 07期

关键词：

D O I：

10.1063/1.1544442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature growth of alpha-Al2O3 films by sputtering was studied with x-ray diffraction and high-resolution transmission electron microscopy (HRTEM). Pure alpha-Al2O3 film was formed at 400 degreesC using Cr2O3 as template, whereas amorphous or theta-Al2O3 was formed without Cr2O3. HRTEM revealed localized epitaxial growth of alpha-Al2O3 on Cr2O3 with the relationship [011](Al2)O-3/[011](Cr2)O-3, suggesting the importance of Cr2O3 as a structural template for the growth of alpha-Al2O3, in addition to other contributions such as good stoichiometry, low sputter pressure, and low deposition rate under optimized deposition conditions. Successful growth of alpha-Al2O3 by sputtering at 400 degreesC or below makes the film widely applicable to even glass substrates. (C) 2003 American Institute of Physics.

引用

页码：1024 / 1026

页数：3

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