Thin film transistors of single-walled carbon nanotubes grown directly on glass substrates

被引:8
作者
Bae, Eun Ju [2 ]
Min, Yo-Sep [2 ]
Kim, Un Jeong [2 ]
Park, Wanjun [1 ]
机构
[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
[2] Samsung Adv Inst Technol, Yongin 449712, Kyeongki Do, South Korea
关键词
D O I
10.1088/0957-4484/18/49/495203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report a transistor of randomly networked single-walled carbon nanotubes on a glass substrate. The carbon nanotube networks acting as the active components of the thin film transistor were selectively formed on the transistor channel areas that were previously patterned with catalysts to avoid the etching process for isolating nanotubes. The nanotube density was more than 50 mu m(-2), which is much larger than the percolation threshold. Transistors were successfully fabricated with a conducting and transparent ZnO for the back-side gate and the top-side gate. This allows the transparent electronics or suggests thin film applications of nanotubes for future opto-electronics.
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页数:4
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