Physical techniques for silicon layer analysis

This paper reviews the application of physical techniques (SIMS, RES, XPS, AES, XRD, Raman and FTIR spectroscopies and AFM) for the characterisation of layers, structures and processes in Si technology. The principles of the techniques are given, and their use for the analysis of Si related structures and processes is discussed. Structural features related to the device and system performances are considered. These include features related to amorphous, polycrystalline and single crystal layers, as grain size and crystal orientation, disorder, defects, strain, composition,..., as well as the quality and nature of surfaces and interfaces in Si related layers (Si, SiGe and ternary related alloys, SiC, dielectric layers, silicides...). Examples taken from the current research in these areas are presented.