Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors - a critical review

被引：37

作者：

Kuo, Y ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

VACUUM | 1998年 / 51卷 / 04期

关键词：

D O I：

10.1016/S0042-207X(98)00282-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the discussion: effects of SiNx gate dielectric material properties to TFT devices and the large area PECVD SiNx processes. The first subject includes. the bulk film characteristics, a-Si:H TFT performance related to the SiNx/a-Si:H interface properties such as morphology and band gaps, the dual SiNx gate dielectric structure, and the influence of a-Si:H deposition processes to transistor performance. The second subject is concentrated on the large area PECVD SiNx processes which include uniformity, film characteristics, etc. At the end, a unified relationship between the TFTS threshold voltage and the SiNx refractive index is presented In the conclusion, relationships among SiNx process, material, and TFT device characteristics are summarized. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：741 / 745

页数：5

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