High quality thermal oxide on LPSOI formed by high temperature enhanced MILC

被引：14

作者：

Chan, ACK ^{[1
]}

Wang, HM ^{[1
]}

Chan, MSJ ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 08期

关键词：

flash; oxide quality; polysilicon;

D O I：

10.1109/55.936351

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of thermal polyoxide grown on large-grain polysilicon-on-insulator (LPSOI) formed by high temperature enhanced metal-induced-lateral-crystallization (MILC) have been investigated. Compared with conventional polysilicon films, LPSOI films have reduced surface roughness and a smaller number of grain boundaries. The improved polysilicon quality leads to better thermal oxide quality, especially at device dimensions that are smaller than the grain size. Intrinsic oxide characteristics such as breakdown voltage, leakage current and charge-to-breakdown value have been experimentally measured. Significant improvement in both oxide quality and device-to-device variation is reported.

引用

页码：384 / 386

页数：3

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