共 14 条
[1]
OXYGEN IMPURITY EFFECTS AT METAL-SILICIDE INTERFACES - FORMATION OF SILICON-OXIDE AND SUBOXIDES IN THE NI-SI SYSTEM
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (03)
:641-648
[5]
Solid-phase reaction of Ni with amorphous SiGe thin film on SiO2
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1997, 36 (12B)
:L1637-L1640
[6]
LOW-TEMPERATURE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON INDUCED BY NICKEL SILICIDE FORMATION
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1990, 29 (12)
:2698-2704
[7]
METAL-CONTACT-INDUCED CRYSTALLIZATION OF SEMICONDUCTORS
[J].
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING,
1994, 179
:426-432
[10]
Lee SW, 1996, IEEE ELECTR DEVICE L, V17, P160, DOI 10.1109/55.485160