Nickel induced crystallization of amorphous silicon thin films

被引:227
作者
Jin, ZH [1 ]
Bhat, GA [1 ]
Yeung, M [1 ]
Kwok, HS [1 ]
Wong, M [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong
关键词
D O I
10.1063/1.368016
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nickel (Ni) induced crystallization of amorphous silicon (a-Si) has been studied by selective deposition of Ni on a-Si thin films. The a-Si under and near the Ni-covered regions was found to be crystallized after heat treatment at 500 degrees C from 1 to 90 h. Micro-Auger electron spectroscopy revealed that a large amount of Ni stayed in the region under the original Ni coverage, but no Ni was detected either in the crystallized region next to the Ni coverage or in the amorphous region beyond the front of the laterally crystallized Si. X-ray photoelectron spectroscopy revealed a nonuniform Ni distribution through the depth of the crystallized film under the original Ni coverage. In particular, a Ni concentration peak was found to exist at the interface of the crystallized Si and the buried oxide. It was found that a layer of 5-nm-thick Ni could effectively induce lateral crystallization of over 100 mu m of a-Si, but the lateral crystallization rate was found to decrease upon extended heat treatment. Transmission electron microscopy analysis showed that the crystallized film under the Ni coverage was composed of randomly oriented fine grains, while that outside the Ni coverage was mainly composed of large (110)-oriented grains. A unified mechanism is proposed to explain the Ni induced crystallization of a-Si and possible reasons for the reduction in the lateral crystallization rate are discussed. (C) 1998 American Institute of Physics.
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页码:194 / 200
页数:7
相关论文
共 14 条
[1]   OXYGEN IMPURITY EFFECTS AT METAL-SILICIDE INTERFACES - FORMATION OF SILICON-OXIDE AND SUBOXIDES IN THE NI-SI SYSTEM [J].
GRUNTHANER, PJ ;
GRUNTHANER, FJ ;
SCOTT, DM ;
NICOLET, MA ;
MAYER, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :641-648
[2]   INSITU TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF SILICIDE-MEDIATED CRYSTALLIZATION OF AMORPHOUS-SILICON [J].
HAYZELDEN, C ;
BATSTONE, JL ;
CAMMARATA, RC .
APPLIED PHYSICS LETTERS, 1992, 60 (02) :225-227
[3]   SILICIDE FORMATION AND SILICIDE-MEDIATED CRYSTALLIZATION OF NICKEL-IMPLANTED AMORPHOUS-SILICON THIN-FILMS [J].
HAYZELDEN, C ;
BATSTONE, JL .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8279-8289
[4]   THERMAL-STABILITY OF SILICIDE ON POLYCRYSTALLINE SI [J].
HONG, QZ ;
HONG, SQ ;
DHEURLE, FM ;
HARPER, JME .
THIN SOLID FILMS, 1994, 253 (1-2) :479-484
[5]   Solid-phase reaction of Ni with amorphous SiGe thin film on SiO2 [J].
Jin, ZH ;
Bhat, GA ;
Yeung, M ;
Kwok, HS ;
Wong, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12B) :L1637-L1640
[6]   LOW-TEMPERATURE CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON INDUCED BY NICKEL SILICIDE FORMATION [J].
KAWAZU, Y ;
KUDO, H ;
ONARI, S ;
ARAI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (12) :2698-2704
[7]   METAL-CONTACT-INDUCED CRYSTALLIZATION OF SEMICONDUCTORS [J].
KONNO, TJ ;
SINCLAIR, R .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1994, 179 :426-432
[8]   PRECIPITATION, EPITAXY AND NUCLEATION IN NICKEL IMPLANTED A-SI [J].
KUZNETSOV, AY ;
KHODOS, II ;
MORDKOVICH, VN ;
VYATKIN, AF .
APPLIED SURFACE SCIENCE, 1993, 73 :253-259
[9]   Fabrication of high-mobility p-channel poly-Si thin film transistors by self-aligned metal-induced lateral crystallization [J].
Lee, SW ;
Ihn, TH ;
Joo, SK .
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (08) :407-409
[10]  
Lee SW, 1996, IEEE ELECTR DEVICE L, V17, P160, DOI 10.1109/55.485160