PRECIPITATION, EPITAXY AND NUCLEATION IN NICKEL IMPLANTED A-SI

被引：3

作者：

KUZNETSOV, AY

KHODOS, II

MORDKOVICH, VN

VYATKIN, AF

机构：

[1] The Institute of Microelectronics Technology and Superpure Materials, Russian Academy of Sciences, Chernogolovka

来源：

APPLIED SURFACE SCIENCE | 1993年 / 73卷

关键词：

D O I：

10.1016/0169-4332(93)90175-B

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report new evidence of nickel-silicide-mediated crystallization. Nickel-silicide precipitates were found to dissolve during crystallization; the nickel atoms diffuse through crystallized silicon regions and form new inclusions in the amorphous phase. Randomization of the precipitates from the region of the initial maximum of nickel concentration depends on the amount of polycrystalline silicon crystallized. It is assumed that the low-temperature crystallization observed both at the initial amorphous/crystalline interface and at silicide facets can be caused by self-diffusivity enhancement due to the formation of point defects during silicidation.

引用

页码：253 / 259

页数：7

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