ON THE ELECTRICAL-CONDUCTION IN THE INTERPOLYSILICON DIELECTRIC LAYERS

被引：41

作者：

COBIANU, C ^{[1
]}

POPA, O ^{[1
]}

DASCALU, D ^{[1
]}

机构：

[1] MICROELECTR S A,R-72996 BUCHAREST,ROMANIA

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 05期

关键词：

D O I：

10.1109/55.215171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Up to now, to reduce the low field electrical conductivity of interpolysilicon dielectrics used in EEPROM devices, the roughness of the poly-SiO2 interface has been decreased in two ways: 1) by increasing the temperature of oxidation and doping of polysilicon combined with the silicon (undoped or in-situ doped) low-pressure chemical vapor deposition (LPCVD) in the amorphous phase, or 2) by the use of LPCVD high-temperature oxide (HTO) deposited over polycrystalline silicon. In this paper we combine the advantages of each method and present the electrical conduction results of the interpoly structure based on LPCVD smooth surface polysilicon and LPCVD HTO SiO2. The data are interpreted in terms of the Fowler-Nordheim mechanism.

引用

页码：213 / 215

页数：3

共 6 条

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J].