PHOSPHORUS DOPED POLYSILICON FOR DOUBLE POLY STRUCTURES .1. MORPHOLOGY AND MICROSTRUCTURE

被引:27
作者
HENDRIKS, M [1 ]
MAVERO, C [1 ]
机构
[1] SGS THOMSON MICROELECTR,I-20041 AGRATE BRIANZA,ITALY
关键词
D O I
10.1149/1.2085808
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In double poly structures, the isolation between the two polysilicon films is achieved by oxidation of the first poly film. The breakdown characteristics and conductivity of the interpoly oxide depend on the surface morphology of the polysilicon film. The surface morphology and microstructure are investigated at various stages in the fabrication process for polysilicon films prepared by five different methods. A high surface quality in combination with a high doping level is only achieved for in situ doped films, deposited in the amorphous state.
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收藏
页码:1466 / 1470
页数:5
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