Mixing at 50 GHz using a single-walled carbon nanotube transistor
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作者:
Rosenblatt, S
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Cornell Univ, Dept Appl & Engn Phys, Atom & Solid State Phys Lab, Ithaca, NY 14853 USACornell Univ, Dept Appl & Engn Phys, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
Rosenblatt, S
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Lin, H
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机构:Cornell Univ, Dept Appl & Engn Phys, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
Lin, H
Sazonova, V
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机构:Cornell Univ, Dept Appl & Engn Phys, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
Sazonova, V
Tiwari, S
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机构:Cornell Univ, Dept Appl & Engn Phys, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
Tiwari, S
McEuen, PL
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机构:Cornell Univ, Dept Appl & Engn Phys, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
McEuen, PL
机构:
[1] Cornell Univ, Dept Appl & Engn Phys, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
We have probed the electrical properties of top-gated single-walled carbon nanotube transistors at frequencies up to 50 GHz by using the device as a microwave mixer. We find that the amplitude of the mixing signal decays as a function of frequency with a characteristic time constant that is limited by the setup. Despite the setup-limited cutoff frequency of similar to 10 GHz, we show that the devices still operate faster than 50 GHz. (C) 2005 American Institute of Physics.
机构:
Univ Calif Irvine, Henry Samueli Sch Engn, Integrated Nanosyst Res Facil, Irvine, CA 92697 USAUniv Calif Irvine, Henry Samueli Sch Engn, Integrated Nanosyst Res Facil, Irvine, CA 92697 USA
机构:
Univ Calif Irvine, Henry Samueli Sch Engn, Integrated Nanosyst Res Facil, Irvine, CA 92697 USAUniv Calif Irvine, Henry Samueli Sch Engn, Integrated Nanosyst Res Facil, Irvine, CA 92697 USA