Investigation on direct bonding of III-V semiconductor wafers with lattice mismatch and orientation mismatch

被引：17

作者：

Okuno, Y

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 20期

关键词：

D O I：

10.1063/1.116347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The direct bonding of various III-V wafers with mismatches in terms of lattice constants and surface orientations was systematically investigated for an In-Ga-As-P system. Many wafer combinations were bonded with sufficient mechanical strength, despite those mismatches. The bonding interface of (001) GaP and (110) InP was observed by transmission electron microscopy and found to be bonded at the atomic level without any defects occurring. The electrical property of the bonding interface was examined for several bonded structures of GaAs and InP. The results support a novel concept ''free-orientation integration,'' which should be achieved by direct bonding. (C) 1996 American Institute of Physics.

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页码：2855 / 2857

页数：3

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