FABRICATION OF (001)-INP-BASED 1.55-MU-M WAVELENGTH LASERS ON A (110)-GAAS SUBSTRATE BY DIRECT BONDING (A PROSPECT FOR FREE-ORIENTATION INTEGRATION)

被引：23

作者：

OKUNO, Y

AOKI, M

TSUCHIYA, T

UOMI, K

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji-Shi, Tokyo 185

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 06期

关键词：

D O I：

10.1063/1.115451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the direct bonding of (001) InP and (110) GaAs and demonstrate its application to device fabrication. Cross-sectional observation shows that these wafers can be united without generating dislocation. (001) M-based 1.55-mu m wavelength lasers are fabricated on (110) GaAs. The light-current characteristics of the lasers are almost identical to those of lasers fabricated on (001) GaAs, while the turn-on voltage is higher by about 0.4 V due to the large band discontinuity. The results show that the direct bonding technique is promising for allowing new concept ''free-orientation integration.'' (C) 1995 American Institute of Physics.

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页码：810 / 812

页数：3

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