Electrical properties of carbon nanotube bundles for future via interconnects

被引:144
作者
Nihei, M
Kawabata, A
Kondo, D
Horibe, M
Sato, S
Awano, Y
机构
[1] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
[2] Fujitsu Labs Ltd, Nantechnol Res Ctr, Atsugi, Kanagawa 2430197, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4A期
关键词
carbon nanotube; chemical vapor deposition; via; interconnect; resistance;
D O I
10.1143/JJAP.44.1626
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450 degrees C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 Omega/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of 2 x 10(6) A/cm(2), which is favorably compared with Cu vias.
引用
收藏
页码:1626 / 1628
页数:3
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