Direct diameter-controlled growth of multiwall carbon nanotubes on nickel-silicide layer

被引：64

作者：

Nihei, M ^{[1
]}

Kawabata, A ^{[1
]}

Awano, Y ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Nanotechnol Res Ctr, Atsugi, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 6B期

关键词：

carbon nanotube; nickel catalyst; nickel-silicide; plasma-enhanced CVD; interconnection;

D O I：

10.1143/JJAP.42.L721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using plasma-enhanced chemical vapor deposition (p-CVD), we grew vertically aligned multiwall carbon nanotubes (CNTs) directly on a nickel-silicide layer, which can be used as electrodes for metal-oxide-semiconductor field-effect transistors (MOSFETs). By using a nickel-silicide layer as a catalyst, the nanotube diameter became smaller than that possible with a nickel film catalyst. We Suggest that Ni-silicide composition plays an important role in controlling the diameter of the nanotubes. To our knowledge, this is the first report on diameter-controlled vertically aligned CNT growth on catalytic metalsilicide substrates. [DOI: 10.1143/JJAP.42.L721].

引用

页码：L721 / L723

页数：3

共 12 条

[1] Logic circuits with carbon nanotube transistors [J].

Bachtold, A ;

Hadley, P ;

Nakanishi, T ;

Dekker, C .

SCIENCE, 2001, 294 (5545) :1317-1320

[2] Selective nucleation and growth of carbon nanotubes at the CoSi2/Si interface [J].

Biró, LP ;

Molnár, G ;

Szabó, I ;

Vértesy, Z ;

Horváth, ZE ;

Gyulai, J ;

Kónya, Z ;

Piedigrosso, P ;

Fonseca, A ;

Nagy, JB ;

Thiry, PA .

APPLIED PHYSICS LETTERS, 2000, 76 (06) :706-708

[3] Nucleation and growth of carbon nanotubes by microwave plasma chemical vapor deposition [J].

Bower, C ;

Zhou, O ;

Zhu, W ;

Werder, DJ ;

Jin, SH .

APPLIED PHYSICS LETTERS, 2000, 77 (17) :2767-2769

[4] Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition [J].

Chhowalla, M ;

Teo, KBK ;

Ducati, C ;

Rupesinghe, NL ;

Amaratunga, GAJ ;

Ferrari, AC ;

Roy, D ;

Robertson, J ;

Milne, WI .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) :5308-5317

[5] Engineering carbon nanotubes and nanotube circuits using electrical breakdown [J].

Collins, PC ;

Arnold, MS ;

Avouris, P .

SCIENCE, 2001, 292 (5517) :706-709

[6] Influence of iron-silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition [J].

de los Arcos, T ;

Vonau, F ;

Garnier, MG ;

Thommen, V ;

Boyen, HG ;

Oelhafen, P ;

Düggelin, M ;

Mathis, D ;

Guggenheim, R .

APPLIED PHYSICS LETTERS, 2002, 80 (13) :2383-2385

[7] Carbon nanotube inter- and intramolecular logic gates [J].

Derycke, V ;

Martel, R ;

Appenzeller, J ;

Avouris, P .

NANO LETTERS, 2001, 1 (09) :453-456

[8] New prospects for microelectronics: Carbon nanotubes [J].

Hoenlein, W .

MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, :76-77

[9] Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition [J].

Huang, ZP ;

Wu, JW ;

Ren, ZF ;

Wang, JH ;

Siegal, MP ;

Provencio, PN .

APPLIED PHYSICS LETTERS, 1998, 73 (26) :3845-3847

[10] HELICAL MICROTUBULES OF GRAPHITIC CARBON [J].

IIJIMA, S .

NATURE, 1991, 354 (6348) :56-58

← 1 2 →