Direct diameter-controlled growth of multiwall carbon nanotubes on nickel-silicide layer

被引：64

作者：

Nihei, M ^{[1
]}

Kawabata, A ^{[1
]}

Awano, Y ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Nanotechnol Res Ctr, Atsugi, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 6B期

关键词：

carbon nanotube; nickel catalyst; nickel-silicide; plasma-enhanced CVD; interconnection;

D O I：

10.1143/JJAP.42.L721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using plasma-enhanced chemical vapor deposition (p-CVD), we grew vertically aligned multiwall carbon nanotubes (CNTs) directly on a nickel-silicide layer, which can be used as electrodes for metal-oxide-semiconductor field-effect transistors (MOSFETs). By using a nickel-silicide layer as a catalyst, the nanotube diameter became smaller than that possible with a nickel film catalyst. We Suggest that Ni-silicide composition plays an important role in controlling the diameter of the nanotubes. To our knowledge, this is the first report on diameter-controlled vertically aligned CNT growth on catalytic metalsilicide substrates. [DOI: 10.1143/JJAP.42.L721].

引用

页码：L721 / L723

页数：3