A numerical study of Auger recombination in bulk InGaN

被引：81

作者：

Bertazzi, Francesco ^{[1
,2
,3
]}

Goano, Michele ^{[1
,2
]}

Bellotti, Enrico ^{[3
]}

机构：

[1] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy

[2] Politecn Torino, IEIIT CNR, I-10129 Turin, Italy

[3] Boston Univ, Dept ECE, Boston, MA 02215 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 23期

基金：

美国国家科学基金会;

关键词：

QUANTUM-WELLS; SILICON; LASERS; RATES; GAN;

D O I：

10.1063/1.3525605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct interband and intraband Auger recombination due to electron-electron-hole and hole-hole-electron transitions in bulk InGaN is investigated by first-order perturbation theory including Fermi statistics, realistic electronic structures obtained by nonlocal empirical pseudopotential calculations, and their corresponding wavevector-dependent dielectric functions. Our results confirm that the intraband Auger coefficient is negligible in alloy compositions relevant for solid-state lighting and indicate that the resonant enhancement associated with interband transitions for wavelengths ranging from blue to green cannot account for the efficiency droop experimentally observed in GaN-based light emitting diodes. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3525605]

引用

页数：3

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