Origin of NBTI Variability in Deeply Scaled pFETs

被引：267

作者：

Kaczer, B. ^{[1
]}

Grasser, T.

Roussel, Ph. J. ^{[1
]}

Franco, J. ^{[2
]}

Degraeve, R. ^{[1
]}

Ragnarsson, L. -A. ^{[1
]}

Simoen, E. ^{[1
]}

Groeseneken, G. ^{[2
]}

Reisinger, H. ^{[3
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, ESAT, Leuven, Belgium

[3] Infineon Technol AG, D-81730 Munich, Germany

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

pFET; Negative Bias Temperature Instability; Random Telegraph Noise; variability; Random Dopant Fluctuations; BIAS-TEMPERATURE INSTABILITY; TRAPS;

D O I：

10.1109/IRPS.2010.5488856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The similarity between Random Telegraph Noise and Negative Bias Temperature Instability (NBTI) relaxation is further demonstrated by the observation of exponentially-distributed threshold voltage shifts corresponding to single-carrier discharges in NBTI transients in deeply scaled pFETs. A SPICE-based simplified channel percolation model is devised to confirm this behavior. The overall device-to-device. Delta V-th distribution following NBTI stress is argued to be a convolution of exponential distributions of uncorrelated individual charged defects Poisson-distributed in number. An analytical description of the total NBTI threshold voltage shift distribution is derived, allowing, among other things, linking its first two moments with the average number of defects per device.

引用

页码：26 / 32

页数：7

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