Ubiquitous relaxation in BTI stressing - New evaluation and insights

被引：230

作者：

Kaczer, B. ^{[1
]}

Grasser, T.

Roussel, Ph. J. ^{[1
]}

Martin-Martinez, J. ^{[2
]}

O'Connor, R. ^{[1
]}

O'Sullivan, B. J. ^{[1
]}

Groeseneken, G. ^{[3
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] UA Barcelona, Barcelona, Spain

[3] Dept ESAT, Leuven, Belgium

来源：

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年

关键词：

D O I：

10.1109/RELPHY.2008.4558858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ubiquity of threshold voltage relaxation is demonstrated in samples with both conventional and high-k dielectrics following various stress conditions. A technique based on recording short traces of relaxation during each measurement phase of a standard measure-stress-measure sequence allows monitoring and correcting for the otherwise-unknown relaxation component. The properties of relaxation are discussed in detail for pFET with SiON dielectric subjected to NBTI stress. Based on similarities with dielectric relaxation, a physical picture and an equivalent circuit are proposed.

引用

页码：20 / +

页数：3

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