Interface properties of MBE grown InSe/Si(111) heterojunctions

被引：13

作者：

ElMonkad, S ^{[1
]}

Eddrief, M ^{[1
]}

Lacharme, JP ^{[1
]}

Amimer, K ^{[1
]}

Sebenne, CA ^{[1
]}

机构：

[1] UNIV PARIS 06,PHYS SOLIDES LAB,CNRS,ERS 113,F-75252 PARIS 05,FRANCE

来源：

SURFACE SCIENCE | 1996年 / 352卷

关键词：

Auger electron spectroscopy; heterojunctions; indium selenide; low energy electron diffraction (LEED); semiconductor-semiconductor heterostructures; silicon; single crystal epitaxy; visible and ultraviolet photoelectron spectroscopy;

D O I：

10.1016/0039-6028(95)01224-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

InSe/Si heterojunctions have been prepared by molecular beam deposition of an InSe epitaxial film, upon a clean 7 x 7-reconstructed Si(111) surface. The InSe layered semiconductor had its c-axis normal to the (111) plane of Si. These heterojunctions have been studied upon sequential thermal thinning of the InSe film under ultrahigh vacuum by low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS). Upon reaching the interface, several reconstructions were observed depending on the remaining Se and In coverages at the Si surface. It is shown that the Si surface can be covered by half a layer of InSe having the 1 x 1 unit mesh of the substrate. Band offset determination is briefly discussed.

引用

页码：833 / 838

页数：6

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