Electrical characteristics for solid C60/GaN heterojunctions

Solid C60/n-GaN heterojunctions have been fabricated and their electrical properties have been studied. It has been found that the heterojunction is a strongly rectifying contact with a rectification ratio greater than 10(6) and with an ideality factor close to 1. The current-temperature measurement shows an exponential decrease of current with increasing reciprocal temperature, from which the effective barrier height is determined to be 0.535 eV. The series resistance measured decreases with increasing forward voltage and finally tends to be constant. (C) 1999 American Institute of Physics. [S0021-8979(99)07309-0].