Effect of sputtered films on morphology of vertical aligned ZnO nanowires

被引：20

作者：

Kar, J. P. ^{[1
]}

Lee, S. W. ^{[1
]}

Lee, W. ^{[2
]}

Myoung, J. M. ^{[1
]}

机构：

[1] Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyoungnam, South Korea

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 20期

关键词：

ZnO; nanowires; thin films; morphology;

D O I：

10.1016/j.apsusc.2008.04.046

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vertical aligned ZnO nanowires were grown by MOCVD technique on silicon substrate using ZnO and AlN thin films as seed layers. The shape of nanostructures was greatly influenced by the under laying surface. Vertical nanopencils were observed on ZnO/Si, whereas the nanowires on both sapphire and AlN/Si substrate have the similar aspect ratio. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy (HRTEM) confirmed the single crystalline growth of the ZnO nanowires along [001] direction. Room-temperature photoluminescence (PL) spectra of ZnO nanowires on AlN/Si clearly show a band-edge luminescence accompanied with a visible emission. More interestingly, no visible emission for the nanopencils on ZnO/Si substrates, were observed. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：6677 / 6682

页数：6

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