Adsorption-controlled molecular-beam epitaxial growth of BiFeO3

被引：75

作者：

Ihlefeld, J. F. ^{[1
]}

Kumar, A.

Gopalan, V.

Schlom, D. G.

Chen, Y. B.

Pan, X. Q.

Heeg, T.

Schubert, J.

Ke, X.

Schiffer, P.

Orenstein, J.

Martin, L. W.

Chu, Y. H.

Ramesh, R.

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48019 USA

[3] Res Ctr, Inst Bio & Nano Syst IBNI IT, D-52425 Julich, Germany

[4] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[5] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[6] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[7] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2767771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BiFeO3 thin films have been deposited on (111) SrTiO3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25 arc sec (0.007 degrees). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature. (C) 2007 American Institute of Physics.

引用

页数：3

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