Nanoscale memory devices

被引：114

作者：

Chung, Andy ^{[1
,5
]}

Deen, Jamal ^{[2
,5
]}

Lee, Jeong-Soo ^{[3
,5
]}

Meyyappan, M. ^{[4
,5
]}

机构：

[1] Inha Univ, Dept Informat & Commun Engn, Inchon 402751, South Korea

[2] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada

[3] POSTECH, Dept Elect Engn, Pohang 790784, South Korea

[4] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

[5] POSTECH, WCU Div IT Convergence Engn, Pohang 790784, South Korea

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 41期

关键词：

RANDOM-ACCESS MEMORY; FIELD-EFFECT TRANSISTORS; NONVOLATILE MEMORY; MOLECULAR ELECTRONICS; ELECTRICAL-PROPERTIES; SWITCHING PHENOMENA; THIN-FILM; NANOTUBE; NANOWIRES; FABRICATION;

D O I：

10.1088/0957-4484/21/41/412001

中图分类号：

TB3 [工程材料学];

学科分类号：

082905 [生物质能源与材料];

摘要：

This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO2.

引用

页数：22

共 129 条

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