Band-gap bowing calculation of SixSn1-x alloy

被引：41

作者：

Ferhat, M

Zaoui, A

机构：

[1] Univ Trieste, Dipartimento Fis Teor, INFM, I-34014 Trieste, Italy

[2] Inst Tronc Commun Technol, Phys Lab, Oran 31000, Algeria

来源：

INFRARED PHYSICS & TECHNOLOGY | 2001年 / 42卷 / 02期

关键词：

D O I：

10.1016/S1350-4495(00)00066-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Using ab initio pseudopotential method within the local density approximation we have investigated the electronic properties of SixSn1-x semiconducting alloy. The bowing parameter of the band-gap energy variation with alloy concentration is found to be large. We also analyzed its origin in terms of chemical and structural effects. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：81 / 85

页数：5

相关论文

共 29 条

[11] INHOMOGENEOUS ELECTRON-GAS [J].

RAJAGOPAL, AK ;

CALLAWAY, J .

PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919

[12] CONVERGENCE OF MOMENTUM SPACE, PSEUDOPOTENTIAL CALCULATIONS FOR SI [J].

HOLZSCHUH, E .

PHYSICAL REVIEW B, 1983, 28 (12) :7346-7348

[13]

JENKINS DW, 1987, PHYS REV B, V36, P7794

[14] Electronic structure of ordered silicon alloys: Direct-gap systems [J].

Johnson, KA ;

Ashcroft, NW .

PHYSICAL REVIEW B, 1996, 54 (20) :14480-14486

[15]

Kittel C., 1986, INTRO SOLID STATE PH

[16] Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy [J].

Kobayashi, N ;

Zhu, DH ;

Katsumata, H ;

Kakemoto, H ;

Hasegawa, M ;

Hayashi, N ;

Shibata, H ;

Makita, Y ;

Uekusa, S ;

Tsukamoto, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4) :199-202

[17] BINDING-ENERGY AND SPECTRAL WIDTH OF SI 2P CORE EXCITONS IN SIXGE1-X ALLOYS [J].

KRISHNAMURTHY, S ;

SHER, A ;

CHEN, AB .

PHYSICAL REVIEW LETTERS, 1985, 55 (03) :320-323

[18] BAND-STRUCTURE AND INSTABILITY OF GE1-XSNX ALLOYS [J].

MADER, KA ;

BALDERESCHI, A ;

VONKANEL, H .

SOLID STATE COMMUNICATIONS, 1989, 69 (12) :1123-1126

[19]

MAKUYAMA T, 1997, J ELECTROCHEM SOC, V144, P4350

[20] SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1977, 16 (04) :1746-1747