Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy

被引:4
作者
Kobayashi, N
Zhu, DH
Katsumata, H
Kakemoto, H
Hasegawa, M
Hayashi, N
Shibata, H
Makita, Y
Uekusa, S
Tsukamoto, T
机构
[1] MEIJI UNIV,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN
[2] SCI UNIV TOKYO,SHINJUKU KU,TOKYO 162,JAPAN
关键词
D O I
10.1016/S0168-583X(96)00391-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
For the synthesis of novel group-IV semiconductors, crystalline growth of amorphous Si1-xSnx and Si1-x-ySnxCy layers in Si formed by Sn and C ion implantation has been investigated with solid phase epitaxial growth (SPEG) and ion-beam-induced epitaxial crystallization (IBIEC), Si(100) wafers were implanted at RT with 110 keV or 270 keV Sn-120 ions to a dose up to x = 0.03 at peak concentration and 17 keV or 35 keV C-12 ions up to y = 0.025 at peak concentration. SPEG experiments at 750 degrees C have shown epitaxial crystallization of the strained alloy layer in the Si1-xSnx/Si sample (x = 0.03) and strain-compensated layer in the Si1-x-ySnxCy/Si sample with medium C concentration (x = 0.03 and y = 0.019). IBIEC experiments performed with 400 keV Ar ions at 350 degrees C have also induced epitaxial crystallization for the Si1-xSnx/Si sample (x = 0.025), whereas those of Si1-x-ySnxCy (x = 0.025 and y = 0.014) have shown a collapse of epitaxial growth, Photoluminescence (PL) from SPEG-grown Si1-xSnx and Si1-x-ySnxCy samples has shown neither prominent I-1 nor G peaks, Present results have revealed features in crystalline growth properties, in both techniques, for the non-thermal equilibrium fabrication of these new alloy semiconductors.
引用
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页码:199 / 202
页数:4
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