Fabrication of a solution-processed thin-film transistor using zinc oxide nanoparticles and zinc acetate

被引：34

作者：

Lee, Sul ^{[1
]}

Jeong, Sunho ^{[1
]}

Kim, Dongjo ^{[1
]}

Park, Bong Kyun ^{[1
]}

Moon, Jooho ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul, South Korea

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期

关键词：

ZnO; nanoparticles; transistor; carrier mobility;

D O I：

10.1016/j.spmi.2007.04.036

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have fabricated a solution-processed ZnO thin-film transistor without vacuum deposition. ZnO nanoparticles were prepared by the polyol method from zinc acetate, polyvinyl pyrrolidone, and diethyleneglycol. The solution-processable semiconductor ink was prepared by dispersing the synthesized ZnO in a solvent. Inverted stagger type thin-film transistors were fabricated by spin casting the ZnO ink on the heavily doped Si wafer with 200 nm thick SiO2, followed by evaporation of Cr/Au source and drain electrodes. After the drying and heat treatment at 600 degrees C, a relatively dense ZnO film was obtained. The film characteristics were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). In order to obtain the electrical properties of the solution-derived transistor, the on-off ratio, threshold voltage, and mobility were measured. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：361 / 368

页数：8

共 22 条

[1] High-performance, solution-processed organic thin film transistors from a novel pentacene precursor [J].