Chemical solution deposition of Zn1-xZrxO thin films as active channel layers of thin-film transistors

被引：28

作者：

Lee, JH ^{[1
]}

Lin, P

Ho, JC

Lee, CC

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 04期

关键词：

D O I：

10.1149/1.2168291

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Sol-gel derived Zn1- xZrxO films and thin-film transistors (TFTs) were investigated in this study, where x ranges from 0.00 to 0.10. The effects of the Zr additive on the crystallinity, grain size, and surface morphology of Zn1- xZrxO films are discussed. Zn1- xZrxO-TFTs exhibited much lower off-state current (I-OFF) and higher on/off ratio than pure ZnO-TFT. The behavior of I-OFF related to the carrier concentration (n) of Zn1-xZrxO films and the correlation between n and the grain size are interpreted. The optimized I-OFF and on/off ratio of Zn1- xZrxO-TFT were 3.24 x 10(-13) A/mu m and 8.89 x 10(6) where x = 0.03, respectively. (c) 2006 The Electrochemical Society.

引用

页码：G117 / G120

页数：4

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