Device characterization for amorphous diamond-like carbon-silicon heterojunctions

We report here on the electrical characterization of Al/a-C:H/n-Si devices, where the a-C:H films were ion implanted with boron. The current-voltage characteristics versus temperature demonstrated the creation of p-n heterojunctions and Schottky diodes. Maximum current outputs were reached faster for higher temperatures. Lower doses of boron implants produced Schottky diode characteristics, with a current saturation in the forward region due to the existing barrier. The values of the output currents increased with temperature and implanted dose. (C) 1998 American Institute of Physics. [S0021-8979(98)00120-0]