New technique for fast characterization of SILC distribution in Flash arrays

被引：16

作者：

Ielmini, D ^{[1
]}

Spinelli, AS ^{[1
]}

Lacaita, AL ^{[1
]}

Confalonieri, L ^{[1
]}

Visconti, A ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

来源：

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001 | 2001年

关键词：

D O I：

10.1109/RELPHY.2001.922885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for characterizing the SILC in Flash memories is presented. The role of the SILC distribution in determining the failure statistics of Flash cell arrays is first pointed out. Then the new technique is explained, and results on a test array are shown. The description in terms of a simplified formula for the leakage current provides evidence for the bimodal distribution of the SILC distribution in the memory array under test. The bimodal character of the SILC distribution is finally verified by directly comparing characteristics measured on real cells with results of the new method on the same memory chip.

引用

页码：73 / 80

页数：8

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