Highly site-specific H2 adsorption on vicinal Si(001) surfaces

被引：91

作者：

Kratzer, P

Pehlke, E

Scheffler, M

Raschke, MB

Höfer, U

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Tech Univ Munich, Dept Phys, D-85747 Garching, Germany

[3] Max Planck Inst Quantum Opt, D-85740 Garching, Germany

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.81.5596

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experimental and theoretical results for the dissociative adsorption of H-2 On vicinal Si(001) surfaces are presented. Using optical second-harmonic generation, sticking probabilities at the step sites are found to exceed those on the terraces by up to 6 orders of magnitude. Density functional theory calculations indicate the presence of direct adsorption pathways for monohydride formation but with a dramatically lowered barrier for step adsorption due to an efficient rehybridization of dangling orbitals.

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页码：5596 / 5599

页数：4

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