110 W(0.9 J) pulsed power from resonantly diode-laser-pumped 1.6-μm Er:YAG laser -: art. no. 121101

被引：98

作者：

Garbuzov, D

Kudryashov, I

Dubinskii, M

机构：

[1] Princeton Lightwave Inc, Cranbury, NJ 08512 USA

[2] USA, Res Lab, AMSRD ARL SE EO, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 12期

关键词：

D O I：

10.1063/1.2051803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

110 W pulse power and 0.93 J pulse energy have been obtained with direct resonant pumping of a 1.6-mu m Er3+-doped bulk solid-state laser with two-dimensional stacks of 1.5 mu m InGaAsP/InP diode lasers.

引用

页码：1 / 3

页数：3

共 6 条

[1] 110 W(0.9 J) pulsed power from resonantly diode-laser-pumped 1.6-μm Er:YAG laser -: art. no. 121101 [J].

Garbuzov, D ;

Kudryashov, I ;

Dubinskii, M .

APPLIED PHYSICS LETTERS, 2005, 87 (12) :1-3

[2] InGaAsP/InP diode laser pumping sources for eye-safe solid-state and fiber lasers [J].

Garbuzov, D ;

Kudryashova, I ;

Komissarov, A .

PHYSICS AND APPLICATIONS OF OPTOELECTRONIC DEVICES, 2004, 5594 :124-130

[3] 1.5 mu m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power [J].

Garbuzov, D ;

Xu, L ;

Forrest, SR ;

Menna, R ;

Martinelli, R ;

Connolly, JC .

ELECTRONICS LETTERS, 1996, 32 (18) :1717-1719

[4] 80mJ/1.64μm pulsed Er:Yb:YAG diode-pumped laser [J].

Georgiou, E ;

Kiriakidi, F ;

Musset, O ;

Boquillon, JP .

SOLID STATE LASERS AND AMPLIFIERS, 2004, 5460 :272-283

[5] Ytterbium solid-state lasers - The first decade [J].

Krupke, WF .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (06) :1287-1296

[6] Efficient 1645-nm Er:YAG laser [J].

Young, YE ;

Setzler, SD ;

Snell, KJ ;

Budni, PA ;

Pollak, TM ;

Chicklis, EP .

OPTICS LETTERS, 2004, 29 (10) :1075-1077

← 1 →