Non-equilibrium alloying controls optoelectronic properties in Cu2O thin films for photovoltaic absorber applications

被引:25
作者
Zakutayev, A. [1 ]
Stevanovic, V. [1 ,2 ]
Lany, S. [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA
关键词
OXIDE; SEMICONDUCTORS;
D O I
10.1063/1.4914974
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cuprous oxide (Cu2O) has recently received much attention as a candidate material for oxide photovoltaics. However, its low absorption coefficient due to the symmetry forbidden band gap and low intrinsic p-type doping level are obstacles for further advancing the performance of Cu2O thin film solar cells. Following computational predictions on the band gap, doping, and optical properties, we report combinatorial synthesis and characterization of Cu2-2xZnxO1-ySey thin film alloys and the associated device modeling results. We show that the absorption and the conductivity can be independently controlled by Se and Zn content, thereby devising a possible route to design of more efficient oxide photovoltaics and tandem solar cells. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 37 条
[1]   Control of Doping in Cu2SnS3 through Defects and Alloying [J].
Baranowski, Lauryn L. ;
Zawadzki, Pawel ;
Christensen, Steven ;
Nordlund, Dennis ;
Lany, Stephan ;
Tamboli, Adele C. ;
Gedvilas, Lynn ;
Ginley, David S. ;
Tumas, William ;
Toberer, Eric S. ;
Zakutayev, Andriy .
CHEMISTRY OF MATERIALS, 2014, 26 (17) :4951-4959
[2]   Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy [J].
Bosco, Jeffrey P. ;
Scanlon, David O. ;
Watson, Graeme W. ;
Lewis, Nathan S. ;
Atwater, Harry A. .
JOURNAL OF APPLIED PHYSICS, 2013, 113 (20)
[3]   Thin film synthesis and properties of copper nitride, a metastable semiconductor [J].
Caskey, Christopher M. ;
Richards, Ryan M. ;
Ginley, David S. ;
Zakutayev, Andriy .
MATERIALS HORIZONS, 2014, 1 (04) :424-430
[4]   Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study [J].
Dudarev, SL ;
Botton, GA ;
Savrasov, SY ;
Humphreys, CJ ;
Sutton, AP .
PHYSICAL REVIEW B, 1998, 57 (03) :1505-1509
[5]   Growth, disorder, and physical properties of ZnSnN2 [J].
Feldberg, N. ;
Aldous, J. D. ;
Linhart, W. M. ;
Phillips, L. J. ;
Durose, K. ;
Stampe, P. A. ;
Kennedy, R. J. ;
Scanlon, D. O. ;
Vardar, G. ;
Field, R. L., III ;
Jen, T. Y. ;
Goldman, R. S. ;
Veal, T. D. ;
Durbin, S. M. .
APPLIED PHYSICS LETTERS, 2013, 103 (04)
[6]   NEW METHOD FOR CALCULATING 1-PARTICLE GREENS FUNCTION WITH APPLICATION TO ELECTRON-GAS PROBLEM [J].
HEDIN, L .
PHYSICAL REVIEW, 1965, 139 (3A) :A796-+
[7]   Enhanced Electron Mobility Due to Dopant-Defect Pairing in Conductive ZnMgO [J].
Ke, Yi ;
Lany, Stephan ;
Berry, Joseph J. ;
Perkins, John D. ;
Parilla, Philip A. ;
Zakutayev, Andriy ;
Ohno, Tim ;
O'Hayre, Ryan ;
Ginley, David S. .
ADVANCED FUNCTIONAL MATERIALS, 2014, 24 (19) :2875-2882
[8]   The origin of electrical property deterioration with increasing Mg concentration in ZnMgO:Ga [J].
Ke, Yi ;
Berry, Joseph ;
Parilla, Philip ;
Zakutayev, Andriy ;
O'Hayre, Ryan ;
Ginley, David .
THIN SOLID FILMS, 2012, 520 (09) :3697-3702
[9]   From ultrasoft pseudopotentials to the projector augmented-wave method [J].
Kresse, G ;
Joubert, D .
PHYSICAL REVIEW B, 1999, 59 (03) :1758-1775
[10]  
Lany S., 2011, B AM PHYS SOC