Simulation of the influence of energetic atoms on Si homoepitaxial growth

被引:32
作者
Hensel, H [1 ]
Urbassek, HM [1 ]
机构
[1] Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 04期
关键词
D O I
10.1103/PhysRevB.58.2050
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using a classical molecular-dynamics simulation, we study the homoepitaxial growth on a Si (100) (2 x 1) surface at 300 K. We compare the structures resulting from the deposition of 2-eV Si atoms, and from a 2% admixture of 30-eV Si atoms. Energetic atom bombardment results in a considerably reduced amorphous layer. This can be shown to be due to the strong bond rearrangement immediately after the energetic atom impact; atom mobility itself is very low. In both simulations, the amorphous layers suffer tensile stress, and an excess of overcoordinated atoms are found. A geometric analysis of the growth of the crystalline phase shows it to be consistent with a well-known structural model of Si recrystallization.
引用
收藏
页码:2050 / 2054
页数:5
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