共 28 条
- [1] APPLICATION OF THE EMBEDDED-ATOM METHOD TO COVALENT MATERIALS - A SEMIEMPIRICAL POTENTIAL FOR SILICON[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (23) : 2666 - 2669BASKES, MI
- [2] COMPARATIVE-STUDY OF THE GROWTH-PROCESSES OF GAAS, ALGAAS, INGAAS, AND INALAS LATTICE MATCHED AND NONLATTICE MATCHED SEMICONDUCTORS USING HIGH-ENERGY ELECTRON-DIFFRACTION[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2856 - 2860BERGER, PRBHATTACHARYA, PKSINGH, J
- [3] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2001 - 2004BISWAS, RHAMANN, DR
- [4] NEW CLASSICAL-MODELS FOR SILICON STRUCTURAL ENERGIES[J]. PHYSICAL REVIEW B, 1987, 36 (12): : 6434 - 6445BISWAS, RHAMANN, DR
- [5] GENERATION OF AMORPHOUS-SILICON STRUCTURES WITH USE OF MOLECULAR-DYNAMICS SIMULATIONS[J]. PHYSICAL REVIEW B, 1987, 36 (14): : 7437 - 7441BISWAS, RGREST, GSSOUKOULIS, CM
- [6] VIBRATIONAL LOCALIZATION IN AMORPHOUS-SILICON[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (22) : 2280 - 2283BISWAS, RBOUCHARD, AMKAMITAKAHARA, WAGREST, GSSOUKOULIS, CM
- [7] MELTING AND FREEZING OF LENNARD-JONES CLUSTERS ON A SURFACE[J]. PHYSICAL REVIEW B, 1987, 36 (16): : 8447 - 8455BLAISTENBAROJAS, EGARZON, ILAVALOSBORJA, M
- [8] ATOMISTIC SIMULATION OF SILICON BEAM DEPOSITION[J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1068 - 1074DODSON, BW
- [9] DEVELOPMENT OF A MANY-BODY TERSOFF-TYPE POTENTIAL FOR SILICON[J]. PHYSICAL REVIEW B, 1987, 35 (06): : 2795 - 2798DODSON, BW
- [10] EVALUATION OF THE STILLINGER-WEBER CLASSICAL INTERACTION POTENTIAL FOR TETRAGONAL SEMICONDUCTORS IN NONIDEAL ATOMIC CONFIGURATIONS[J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7361 - 7363DODSON, BW