Carrier generation and inherent off-stoichiometry in Zn, Sn codoped indium oxide (ZITO) bulk and thin-film specimens

被引：31

作者：

Harvey, Steven P. ^{[1
]}

Mason, Thomas O. ^{[1
]}

Buchholz, D. Bruce ^{[1
]}

Chang, Robert P. H. ^{[1
]}

Korber, Christoph ^{[2
]}

Klein, Andreas ^{[2
]}

机构：

[1] Northwestern Univ, Ctr Mat Res, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Tech Univ Darmstadt, Dept Mat Sci, Surface Sci Div, D-64287 Darmstadt, Germany

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2008年 / 91卷 / 02期

关键词：

D O I：

10.1111/j.1551-2916.2007.02135.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical studies of the Zn, Sn codoped bixbyite (In2O3) phase (ZITO), a promising alternative to indium-tin oxide (ITO) for transparent conductor applications, indicate that an inherent cation off-stoichiometry in favor of Sn donors versus Zn acceptors dominates the defect chemistry of this important transparent conducting oxide. This was shown by bulk phase diagram and conductivity studies, thin-film electrical/optical measurements, and photoelectron spectroscopy on both bulk and thin-film specimens. The Sn-excess character explains the persistent n-type behavior of bulk ZITO, the relative redox insensitivity of codoped compositions, the existence of "special" (optimized conductivity) compositions in phase space for pulsed laser-deposited films, and the propensity for surface chemical depletion in both bulk and thin-film specimens.

引用

页码：467 / 472

页数：6

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