Dense and porous ZnO thin films produced by pulsed laser deposition

被引：34

作者：

Sun, YW

Gospodyn, J

Kursa, P

Sit, J

DeCorby, RG

Tsui, YY ^{[1
]}

机构：

[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada

[2] TRLabs, Edmonton, AB T6G 2V4, Canada

来源：

APPLIED SURFACE SCIENCE | 2005年 / 248卷 / 1-4期

关键词：

ZnO; pulsed laser deposition; thin film; porous film; photolummescence; optical constant;

D O I：

10.1016/j.apsusc.2005.03.064

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Dense and porous zinc oxide (ZnO) thin films were deposited onto silicon substrates in vacuum and in 100 mTorr O-2 at room temperature by pulsed laser deposition using 15 ns krypton fluoride (KrF), lambda = 248 nm, laser pulses with laser fluence of 3 J cm(-2). The structural, morphological, optical and photoluminescence properties of the as-grown and annealed ZnO thin films were studied. O-2 background gas during deposition and post-annealing treatment were essential to obtain a crystalline structure and strong ultraviolet (UV) luminescence emissions. (c) 2005 Elsevier B.V. All rights reserved.

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页码：392 / 396

页数：5

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