ZnO growth toward optical devices by MOVPE using N2O

Wide bandgap semiconductor zinc oxide (ZnO) layers were grown by metalorganic vapor phase epitaxy (MOVPE) using nitrous oxide (N2O). Strong ultraviolet (UV) photoluminescence emissions with 1000 times less deep ones at room temperature were observed from ZnO layers grown on sapphire. A low temperature (500 infinityC)-grown buffer layer of ZnO was effective to enhance the initial nucleation process and to achieve high quality ZnO layers on it at higher growth temperatures (600-700 infinityC). ZnO layers grown on III-V semiconductor substrates showed dominant UV luminescence in spite of low temperature growth. These results imply the abilities of high quality ZnO growth by MOVPE.