New electronic surface states on In-terminated InAs(001)4x2-c(8x2) clean surface

被引：13

作者：

De Padova, P

Perfetti, P

Quaresima, C

Richter, C

Heckmann, O

Zerrouki, M

Johnson, RL

Hricovini, K

机构：

[1] CNR, Ist Struttura Mat, I-00133 Rome, Italy

[2] Univ Cergy Pontoise, LMPS, F-95031 Cergy Pontoise, France

[3] Univ Hamburg, Inst Expt Phys, D-22671 Hamburg, Germany

[4] LURE, F-91898 Orsay, France

来源：

SURFACE SCIENCE | 2003年 / 532卷

关键词：

angle resolved photoemission; synchrotron radiation photoelectron spectroscopy; surface electronic phenomena (work function; surface potential; surface states; etc.); indium arsenide; single crystal surfaces;

D O I：

10.1016/S0039-6028(03)00473-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the studies of electronic structure of the InAs(001)4 x 2-c(8 x 2) surface by performing angle-resolved photoemission spectroscopy, LEED and STM measurements. The reconstruction of the clean surface was obtained by ion bombardment and annealing procedure. STM pictures show an ordered array of In-chains, and the photoemission experiments reveal new electronic surface structures. The intensity of these structures, which are located at binding energy of -2.94 and -1.05 eV, strongly depend on the surface preparation, and on the light polarization. They,are non-dispersive with the photon energy. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：837 / 842

页数：6

共 23 条

[1] Controlled deposition of size-selected silver nanoclusters [J].