Electrical and optical properties of ZnO:Mn thin films grown by MOCVD

被引：36

作者：

Chikoidze, E.

Dumont, Y.

Jomard, F.

Gorochov, O.

机构：

[1] Univ Versailles St Quentin Yvelines, CNRS, Grp Etudes Mat Condensee, F-92195 Meudon, France

[2] Tbilisi State Univ, Dept Mat Sci, Tbilisi, Georgia

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 24期

关键词：

ZnO; magnetic semiconductors; MOCVD; transport properties; optical transmittance;

D O I：

10.1016/j.tsf.2007.03.133

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diluted magnetic semiconductor epitaxial thin films of Zn1-xMnxO have been grown on c-sapphire by the MOCVD technique. Variations of a and c lattice parameters follow Vegard's law and attest to the incorporation of substitutional Mn2+ ions. Carrier concentration (n-type) and electron mobility were studied versus temperature for different concentrations of manganese. Incorporation of manganese leads to the opening of the band gap, observed as a blue shift in energy regarding pure ZnO. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8519 / 8523

页数：5

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