Field emission of nitrogen-doped diamond films

被引:18
作者
Han, IT
Lee, N
Lee, SW
Kim, SH
Jeon, D
机构
[1] Samsung Adv Inst Technol, Elect Mat Lab, Suwon 440600, South Korea
[2] Myoung Gi Univ, Dept Phys, Seoul 449728, South Korea
[3] Silla Univ, Dept Chem, Pusan 617736, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 04期
关键词
D O I
10.1116/1.589843
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors investigated field emission characteristics of nitrogen-doped diamond films, which were grown using microwave plasma-enhanced chemical vapor deposition. Nitrogen-doped films showed low turn-on voltages below 2 V/mu m. Secondary ion mass spectroscopy was used to compare nitrogen concentrations in the films. Morphologies, Raman spectra, the resistivities, and surface roughness of the films were changed as the nitrogen concentrations varied. The field emission properties of heavily nitrogen doped diamond films were related to the film resistivity, surface morphologies and Raman characteristics. (C) 1998 American Vacuum Society.
引用
收藏
页码:2052 / 2056
页数:5
相关论文
共 13 条
  • [1] NEGATIVE ELECTRON-AFFINITY EFFECTS ON H-PLASMA EXPOSED DIAMOND(100) SURFACES
    BAUMANN, PK
    NEMANICH, RJ
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) : 802 - 805
  • [2] Geis MW, 1996, APPL PHYS LETT, V68, P2294, DOI 10.1063/1.116168
  • [3] ELECTRON FIELD-EMISSION FROM DIAMOND AND OTHER CARBON MATERIALS AFTER H-2, O-2 AND CS TREATMENT
    GEIS, MW
    TWICHELL, JC
    MACAULAY, J
    OKANO, K
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1328 - 1330
  • [4] FIELD-EMISSION FROM P-TYPE POLYCRYSTALLINE DIAMOND FILMS
    HONG, D
    ASLAM, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 427 - 430
  • [5] Dopant incorporation mechanisms during the growth of thin film diamond
    Jackman, RB
    Baral, B
    Kingsley, CR
    Foord, JS
    [J]. DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) : 378 - 382
  • [6] Field emission behavior of (nitrogen incorporated) diamond-like carbon films
    Lee, KR
    Eun, KY
    Lee, S
    Jeon, DR
    [J]. THIN SOLID FILMS, 1996, 290 : 171 - 175
  • [7] Negative electron affinity surfaces of aluminum nitride and diamond
    Nemanich, RJ
    Baumann, PK
    Benjamin, MC
    King, SW
    vanderWeide, J
    Davis, RF
    [J]. DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) : 790 - 796
  • [8] Investigation of n-doping in CVD diamond using gap states spectroscopy
    Nesladek, M
    Meykens, K
    Stals, LM
    Quaeyhaegens, C
    DOlieslaeger, M
    Wu, TD
    Vanecek, M
    Rosa, J
    [J]. DIAMOND AND RELATED MATERIALS, 1996, 5 (09) : 1006 - 1011
  • [9] Low-threshold cold cathodes made of nitrogen-doped chemical-vapour-deposited diamond
    Okano, K
    Koizumi, S
    Silva, SRP
    Amaratunga, GAJ
    [J]. NATURE, 1996, 381 (6578) : 140 - 141
  • [10] Electron affinity of carbon systems
    Robertson, J
    [J]. DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) : 797 - 801