Effects of nanodomain formation on the electronic structure of doped carbon nanotubes

被引:280
作者
Carroll, DL [1 ]
Redlich, P
Blase, X
Charlier, JC
Curran, S
Ajayan, PM
Roth, S
Ruhle, M
机构
[1] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
[2] Max Planck Inst Met Res, D-70174 Stuttgart, Germany
[3] Univ Lyon 1, Dept Mat Phys, UMR 5586, F-69622 Villeurbanne, France
[4] Catholic Univ Louvain, Unite Physicochim & Phys Mat, B-1348 Louvain, Belgium
[5] Trinity Coll Dublin, Dept Phys, Dublin 2, Ireland
[6] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[7] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
关键词
D O I
10.1103/PhysRevLett.81.2332
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Changes in the electronic structure of multiwalled nanotubes due to the introduction of boron in the lattice are identified using scanning tunneling spectroscopy. Doped tubes are metallic with no apparent band gap, in contrast to undoped tubes with varying electronic character. Combined with ab initio calculations, we show that changes in the local density of states, as determined from tunneling spectroscopy, must be interpreted in terms of nanodomains of dopant islands and not as isolated substitutional species.
引用
收藏
页码:2332 / 2335
页数:4
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