A simple method for high-frequency characterization of (Ba,Sr)TiO3 thin film capacitors

被引：1

作者：

Jang, BT ^{[1
]}

Kwak, DH ^{[1
]}

Cha, SY ^{[1
]}

Lee, SH ^{[1
]}

Lee, HC ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

INTEGRATED FERROELECTRICS | 1998年 / 20卷 / 1-4期

关键词：

DRAM; BST; dielectric; microwave measurement;

D O I：

10.1080/10584589808238782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed a simple method for characterizing high-frequency properties of (Ba,Sr)TiO3 thin film capacitors. This method includes a new fabrication process, a simple circuit model of measurement pattern and an easy procedure to de-embed parasitic components. In this study we successfully fabricated BST capacitors of Pt/ Ba0.7Sr0.3TiO3/Pt/Ti structure on the SiO2 coated Si substrate using a combination of lift-off process, wet etching and Au plating process. Also, we de-embedded parasitic components in the coplanar-type probing pad using two de-embedding patterns. As a result, it was found that the BST film had high dielectric property up to 5 GHz. This microwave property of the BST film is considered to be suitable for DRAM applications.

引用

页码：215 / 224

页数：10

共 4 条

[1] MEASUREMENT OF HIGH-FREQUENCY DIELECTRIC CHARACTERISTICS IN THE MM-WAVE BAND FOR DIELECTRIC THIN-FILMS ON SEMICONDUCTOR SUBSTRATES [J].

IKUTA, K ;

UMEDA, Y ;

ISHII, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B) :L1211-L1213

[2]

POZAR DM, 1993, MICROWAVE ENG, P235

[3]

VANGLABBEEK JJ, 1993, MATER RES SOC S P, V310, P127

[4] High frequency dielectric properties of thin-film PZT capacitors [J].

Williamson, W ;

Gilbert, BK ;

Chen, HD ;

Udayakumar, KR ;

Cross, LE ;

Bozler, CM .

INTEGRATED FERROELECTRICS, 1995, 10 (1-4) :335-342

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