Investigations of ion implanted iron silicide layers after annealing and irradiation

200 keV Fe+ ions were implanted into silicon at 350 degrees C to investigate the phase formation of alpha-, beta-FeSi2 and epsilon-FeSi. Doses of 1, 3, 5, and 7 X 10(17) cm(-2) were used to produce different silicides. Subsequent annealing of three samples (1, 3, and 7 X 10(17) cm(-2)) at 1150 degrees C for 30 s leads to phase transitions and changes of the silicide fractions. The sample implanted with 5 X 10(17) cm(-2) Fe was irradiated with 3 MeV Si at room temperature, and shows significant changes in the phase composition, too. Conversion electron Mossbauer spectroscopy, Auger electron spectroscopy sputter depth profiling, Rutherford backscattering spectroscopy and X-ray diffraction were used for sample characterization. The results of the different methods, which have different depth sensitivities are combined and compared to each other. The results are discussed with respect to the different processes which take place during implantation, annealing and post irradiation.