Large voltage from spin pumping in magnetic tunnel junctions

被引：15

作者：

Chui, S. T. ^{[1
]}

Lin, Z. F.

机构：

[1] Univ Delaware, Bartol Res Inst, Newark, DE 19716 USA

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.77.094432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the response of a ferromagnet-insulator-normal metal tunnel structure under an external oscillating radio frequency (rf) magnetic field. The dc voltage across the junction is calculated and is found not to decrease despite the high resistance of the junction; instead, it is of the order of 1 - 100 mu V, much larger than the experimentally observed value (100nV) in the "strongly coupled" Ohmic ferromagnet-normal metal bilayers. This is consistent with recent experimental results in tunnel structures, where the voltage is larger than microvolts. The damping and loss of an external rf field in this structure are calculated.

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页数：7

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