Significant dielectric enhancement in 0.3BiFeO3-0.7SrBi2Nb2O9

被引:23
作者
Gu, HS [1 ]
Xue, JM [1 ]
Wang, J [1 ]
机构
[1] Natl Univ Singapore, Fac Sci, Dept Mat Sci, Singapore 119260, Singapore
关键词
D O I
10.1063/1.1405420
中图分类号
O59 [应用物理学];
学科分类号
摘要
Significant dielectric enhancement is observed in 0.3BiFeO(3)-0.7SrBi(2)Nb(2)O(9), when a single-phase layered perovskite structure was formed by sintering the mechanically activated oxide composition. The Curie point of xBiFeO(3)-(1-x)SrBi2Nb2O9 was shifted upward with an increase in the BiFeO3 content. 0.3BiFeO(3)-0.7SrBi(2)Nb(2)O(9) exhibits a dielectric constant of 1.84x10(5) at the Curie point of 750 degreesC. The lattice dimensions of xBiFeO(3)-(1-x)SrBi2Nb2O9 decrease slightly with an increase in the content of BiFeO3 over the composition range of x=0-0.2, while 0.3 mol BiFeO3 in SrBi2Nb2O9 led to recovery in the lattice dimensions. The much enhanced dielectric properties observed in 0.3BiFeO(3)-0.7SrBi(2)Nb(2)O(9) are therefore due to the enlarged rattling space for both Nb5+ and in particular for smaller Fe3+. (C) 2001 American Institute of Physics.
引用
收藏
页码:2061 / 2063
页数:3
相关论文
共 19 条
[1]  
BUCHANAN RC, 1997, MAT CRYSTAL CHEM, P109
[2]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[3]   Influence of Bi-site substitution on the ferroelectricity of the Aurivillius compound Bi2SrNb2O9 [J].
Duran-Martin, P ;
Castro, A ;
Millan, P ;
Jimenez, B .
JOURNAL OF MATERIALS RESEARCH, 1998, 13 (09) :2565-2571
[4]   Dielectric properties of layered perovskite Sr1-xAxBi2Nb2O9 ferroelectrics (A=La, Ca and x=0,0.1) [J].
Forbess, MJ ;
Seraji, S ;
Wu, Y ;
Nguyen, CP ;
Cao, GZ .
APPLIED PHYSICS LETTERS, 2000, 76 (20) :2934-2936
[5]   Synthesis and ferroelectric properties of c-axis oriented Bi4Ti3O12 thin films by sol-gel process on platinum coated silicon [J].
Gu, HS ;
Kuang, AX ;
Wang, SM ;
Bao, DH ;
Wang, LS ;
Liu, JS ;
Li, XJ .
APPLIED PHYSICS LETTERS, 1996, 68 (09) :1209-1210
[6]   Structure property relations in BiFeO3/BaTiO3 solid solutions [J].
Kumar, MM ;
Srinivas, A ;
Suryanarayana, SV .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (02) :855-862
[7]   CHARACTERISTICS OF BISMUTH LAYERED SRBI2TA2O9 THIN-FILM CAPACITORS AND COMPARISON WITH PB(ZR,TI)O-3 [J].
MIHARA, T ;
YOSHIMORI, H ;
WATANABE, H ;
DEARAUJO, CAP .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5233-5239
[8]   STRUCTURE REFINEMENT OF COMMENSURATELY MODULATED BISMUTH STRONTIUM TANTALATE, BI2SRTA2O9 [J].
RAE, AD ;
THOMPSON, JG ;
WITHERS, RL .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1992, 48 :418-428
[9]  
Ramesh R., 1992, Integrated Ferroelectrics, V1, P1, DOI 10.1080/10584589208215562
[10]   FERROELECTRIC MEMORIES [J].
SCOTT, JF ;
DEARAUJO, CAP .
SCIENCE, 1989, 246 (4936) :1400-1405